Nexperia

BUK6D43-60EX

Single FETs, MOSFETs

Manufacturer
MPN
BUK6D43-60EX
Package / Case
DFN-6-MD
Key Attributes
MOSFET N-CH 60V DFN-6-MD(2x2)

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current13 A
Chan TypeN-Channel
Pd W15 W
Rds On Ohm0.032 Ω
Gate Charge C10.0
Configuration-
Gate Threshold Voltage (Vgs(th))1.7V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 N-channel
Input Capacitance(Ciss)590pF
Vgs+/-20V
Output Cap Coss6e-11
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CaseDFN-6-MD

Product Introduction

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Extended temperature range Tj = 175 ℃
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2×2×0.65 mm
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • - Relay driver - High-speed line driver - Low-side load switch - Switching circuits

Datasheet

📄 Open Download

Alternative Parts

Common BUK6D43-60EX alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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