BUK6D120-60PX
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 8 A |
| Pd W | 15 W |
| Rds On Ohm | 0.12 Ω |
| Gate Charge C | 18.0 |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 724pF |
| Operating Temp | -55°C ~ +175°C |
| Package / Case | DFN-6-EP |
Product Introduction
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- Small and leadless ultra thin SMD plastic package: 2×2×0.65 mm
- Trench MOSFET technology
- AEC-Q101 qualified
Applications
- - Relay driver - High-speed line driver - High-side load switch - Switching circuits
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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