BSZ0902NSIATMA1
Transistors (BJT/MOSFET)
Manufacturer
MPN
BSZ0902NSIATMA1
Product Type
Package / Case
TSDSON-8
Datasheet
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 102A
Pd - Power Dissipation: 48W
Gate Threshold Voltage (Vgs(th)): 2V
RDS(on): 3.7mΩ@4.5V
Type: N-Channel
Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 102A
Pd - Power Dissipation: 48W
Gate Threshold Voltage (Vgs(th)): 2V
RDS(on): 3.7mΩ@4.5V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 102 A |
| Chan Type | N-Channel |
| Pd W | 48 W |
| Output Capacitance(Coss) | 838pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.995nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 3.7mOhm@4.5V |
| Gate Charge C | 24nC@10V |
| Type | N-Channel |
| Package / Case | TSDSON-8 |
Features
- SyncFET optimized for high-performance buck converters
- Integrated monolithic Schottky-like diode
- Ultra-low R DS(on) at V GS = 4.5 V
- 100% avalanche tested
- Excellent thermal resistance performance
- N-channel
- JEDEC qualified for target applications
- Lead-free plated leads; RoHS compliant
- Halogen-free per IEC61249-2-21
Datasheet
Alternative Parts
Common BSZ0902NSIATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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