BSS84AKW,115
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 50 V |
| Continuous Drain Current | 0.15 A |
| Chan Type | P-Channel |
| Pd W | 0.26 W |
| Rds On Ohm | 7.5 Ω |
| Gate Charge C | 350.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 36pF |
| Vgs | +/-20V |
| Output Cap Coss | 4.5e-12 |
| Operating Temp | -55°C ~ +150°C |
| Type | P-Channel |
| Package / Case | SC-70 |
Product Introduction
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Logic level compatible
- ESD protection up to 1 kV
- Extremely fast switching
- AEC-Q101 qualified
- Trench MOSFET technology
Applications
- - Relay driver - High-side loadswitch - High-speed line driver - Switching circuits
Datasheet
Alternative Parts
Common BSS84AKW,115 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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