BSS806N-VB
Transistors (BJT/MOSFET)
Manufacturer
VBsemi ElecAsian Brands
MPN
BSS806N-VB
Product Type
Package / Case
SOT-23(TO-236)
Datasheet
Key Attributes
MOSFET N-CH 20V 20A SOT-23(TO-236)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 20 A |
| Chan Type | N-Channel |
| Pd W | 1.25 W |
| Output Capacitance(Coss) | 105pF |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 865pF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 50mOhm@1.8V |
| Gate Charge C | 8.8nC@4.5V |
| Type | N-Channel |
| Package / Case | SOT-23(TO-236) |
Features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Applications
- DC/DC Converter - Load Switch for Portable Applications
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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