Infineon Technologies

BSC093N04LSG

Transistors (BJT/MOSFET)

MPN
BSC093N04LSG
Package / Case
TDSON-8(5x6)
Key Attributes
MOSFET N-CH 40V 49A TDSON-8(5x6)

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current49 A
Chan TypeN-Channel
Pd W35 W
Output Capacitance(Coss)450pF
Configuration-
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)16pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)1.9nF
Vgs±20V
Operating Temperature-55°C~+150°C
Rds On Ohm9.3mOhm@10V
Gate Charge C24nC@10V
TypeN-Channel
Package / CaseTDSON-8(5x6)

Features

  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC for target applications
  • N-channel; Logic level
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • Superior thermal resistance
  • 100% Avalanche tested
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Datasheet

📄 Open Download

Alternative Parts

Common BSC093N04LSG alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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