Infineon Technologies

BSC035N10NS5

Transistors (BJT/MOSFET)

MPN
BSC035N10NS5
Package / Case
TDSON-8(5x6)
Key Attributes
MOSFET N-CH 100V 100A TDSON-8(5x6)

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current100 A
Chan TypeN-Channel
Pd W156 W
Output Capacitance(Coss)1nF
Configuration-
Gate Threshold Voltage (Vgs(th))3.8V
Reverse Transfer Capacitance (Crss@Vds)60pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)6.5nF
Vgs±20V
Operating Temperature-55°C~+150°C
Rds On Ohm3.5mOhm@10V
Gate Charge C87nC@10V
TypeN-Channel
Package / CaseTDSON-8(5x6)

Features

  • Optimized for high performance SMPS, e.g. sync. rec.
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21

Applications

  • Solid-state circuit breaker - Soft-start control - Linear amplifier - Programmable load - Current regulator

Datasheet

📄 Open Download

Alternative Parts

Common BSC035N10NS5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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