BSC031N06NS3 G-VB
Transistors (BJT/MOSFET)
Manufacturer
VBsemi ElecAsian Brands
MPN
BSC031N06NS3 G-VB
Product Type
Package / Case
DFN5x6-8
Datasheet
Key Attributes
MOSFET N-CH 60V 100A DFN5x6-8
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 100 A |
| Chan Type | N-Channel |
| Pd W | 136 W |
| Output Capacitance(Coss) | 470pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 2.65nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 3mOhm@10V |
| Gate Charge C | 47nC@10V |
| Type | N-Channel |
| Package / Case | DFN5x6-8 |
Features
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
Applications
- OR gate applications
- Servers
- DC-DC converters
Datasheet
Alternative Parts
Common BSC031N06NS3 G-VB alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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