BSC026N04LS
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 119 A |
| Chan Type | N-Channel |
| Pd W | 63 W |
| Rds On Ohm | 0.004 Ω |
| Gate Charge C | 45.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 104pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.22nF |
| Vgs | +/-20V |
| Output Cap Coss | 9e-10 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TDSON-8 |
Product Introduction
The HXY4012GD utilizes advanced trench technology to achieve excellent drain-source on-resistance, low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
- Optimized for high performance SMPS, e.g. sync. rec.
- Very low on-resistance RDS(on) @ Vgs = 4.5 V
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Applications
- - Wireless Charging - Boost Driver - Brushless Motor - TO-252-4L - N-Channel MOSFET - P-Channel MOSFET
Datasheet
Alternative Parts
Common BSC026N04LS alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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