BSC004NE2LS5
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 25 V |
| Continuous Drain Current | 479 A |
| Pd W | 188 W |
| Rds On Ohm | 0 Ω |
| Gate Charge C | 135.0 |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 3.1nF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
| Operating Temp | -55°C ~ +175°C |
| Package / Case | TDSON-8FL |
Product Introduction
This N-channel MOSFET is designed to improve overall efficiency by minimizing switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low drain-source on-resistance, fast switching speed, and body diode reverse recovery performance.
Features
- Optimized for OR-ing applications
- Ultra-low on-resistance R DS(ON) at VGS = 4.5 V
- 100% avalanche tested
- Excellent thermal resistance performance
- N-channel
- Lead-free lead plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Applications
- - OR-ing FET / Load Switch - DC-DC Conversion
Datasheet
Alternative Parts
Common BSC004NE2LS5 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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