Nexperia

BCV27,215

Single Bipolar Transistors

Manufacturer
MPN
BCV27,215
Package / Case
SOT-23

Technical Specifications

TypeDescription
Vbe Saturation(VBE(sat))1.5V
Current - Collector Cutoff100nA
Vbe On(VBE(on))1.4V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO10V
DC Current Gain20000
TypeDescription
Current - Collector(Ic)500mA
TypeNPN
Vce Saturation(VCE(sat))1V
Operating Temp-65°C ~ +150°C
Pd W0.25 W
Package / CaseSOT-23

Product Introduction

NPN Darlington transistor in a small SOT23 (TO-236AB) SMD plastic package.

PNP complement: BCV26

Features

  • Medium current 500 mA
  • Low voltage 30 V
  • High DC current gain, minimum 4000
  • AEC-Q101 qualified

Applications

  • - Preamplifier input amplification

Datasheet

📄 Open Download

Alternative Parts

Common BCV27,215 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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