BC856B-QR
Single Bipolar Transistors
Manufacturer
MPN
BC856B-QR
Product Type
Package / Case
DFN1110D-3
Datasheet
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 1nA |
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 65V |
| DC Current Gain | 475 |
| Emitter-Base Voltage VEBO | 5V |
| Current - Collector(Ic) | 100mA |
| Type | Description |
|---|---|
| Number | 1 PNP |
| Type | PNP |
| Vce Saturation(VCE(sat)) | 75mV;250mV |
| Operating Temp | -65°C ~ +150°C |
| Pd W | 0.25 W |
| Package / Case | DFN1110D-3 |
Product Introduction
PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package.
Features
- Low current (max. 100 mA)
- Low voltage (max. 65 V)
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- - General-purpose switching and amplification
Datasheet
Alternative Parts
Common BC856B-QR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Sourcing Information
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