AT25512N-SH-T
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 20 MHz |
| Memory Size | 512Kbit |
| Access Time | - |
| Data Retention - TDR (Year) | 100 Years |
| Write Cycle Time(tWC) | 5ms |
| Standby Supply Current | 2uA |
| Type | Description |
|---|---|
| Write Cycle Endurance | 1,000,000 cycles |
| Operating Temperature | -40°C~+85°C |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL) |
| Supply Voltage | 1.8V~5.5V |
| Interface | SPI |
| Package / Case | SOIC-8 |
Product Introduction
The AT25512 provides 524,288 bits of Serial Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 65,536 words of 8 bits each. The device is optimized for use in many industrial and commercia
Features
- Serial Peripheral Interface (SPI) Compatible
- Supports SPI Modes 0 (0,0) and 3 (1,1): – Data sheet describes mode 0 operation
- Low-Voltage Operation: – 1.8V (ΔVCC = 1.8V to 5.5V)
- Industrial Temperature Range: -40℃ to +85℃
- 20 MHz Clock Rate (5V)
- 128‑Byte Page Mode
- Block Write Protection: – Protect 1/4, 1/2 or entire array
- Write-Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data Protection
- Self-Timed Write Cycle within 5 ms Maximum
- ESD Protection > 4,000 V
- High Reliability: – Endurance: 1,000,000 write cycles – Data retention: 100 years
- Green (Lead-free/Halide-free/RoHS Compliant) Package Options
- Die Sale Options: Wafer Form and Bumped Wafers
Datasheet
Alternative Parts
Common AT25512N-SH-T alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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