AON7264E(ES)
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 55 A |
| Chan Type | N-Channel |
| Pd W | 48 W |
| Output Capacitance(Coss) | 198pF |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.034nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 11.3mOhm@4.5V |
| Gate Charge C | 77nC@10V |
| Type | N-Channel |
| Package / Case | PDFN3x3-8L |
Product Introduction
The AON7264E(ES) is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product AON7264E(ES) is Pb-free.
Features
- Reliable and rugged Avalanche Rated
- Low leakage current
Applications
- PWM applications
- Load switch
- Power management in portable/desktop PCs
- DC/DC conversion
Datasheet
Alternative Parts
Common AON7264E(ES) alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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