2N7002NXAKR
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 0.245 A |
| Chan Type | N-Channel |
| Pd W | 0.797 W |
| Rds On Ohm | 4.5 Ω |
| Gate Charge C | 430.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20pF |
| Vgs | +/-20V |
| Output Cap Coss | 3.3999999999999996e-12 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Very fast switching Trench MOSFET technology ESD protected
Applications
- - Relay driver - High-speed line driver - Low-side load switch - Switching circuits
Datasheet
Alternative Parts
Common 2N7002NXAKR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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