Diodes Incorporated

2N7002KQ-7

Transistors (BJT/MOSFET)

Manufacturer
Diodes Incorporated
MPN
2N7002KQ-7
Product Type
Semiconductors & Discrete
Package / Case
SOT-23
Datasheet
2N7002KQ-7 Datasheet
Key Attributes
MOSFET N-CH 60V 380mA SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current380 mA
Chan TypeN-Channel
Pd W0.54 W
Output Capacitance(Coss)25pF
Ciss-Input Capacitance50pF
Reverse Transfer Capacitance (Crss)5pF
TypeDescription
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.5V
Operating Temperature-55°C~+150°C
Rds On Ohm3Ohm@5V
Gate Charge C300pC@10V
TypeN-Channel
Package / CaseSOT-23

Product Introduction

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control, Power Management Functions, Backlighting

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

  • Motor Control
  • Power Management Functions
  • Backlighting

Datasheet

📄 Open Download

Alternative Parts

Common 2N7002KQ-7 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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