2N7002BKS,115
FET, MOSFET Arrays
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 0.3 A |
| Chan Type | N-Channel |
| Pd W | 0.295 W |
| Rds On Ohm | 1.6 Ω |
| Gate Charge C | 600.0 |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Type | Description |
|---|---|
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
| Vgs | +/-20V |
| Type | N-Channel |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 7e-12 |
| Package / Case | SOT-363 |
Product Introduction
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
- AEC-Q101 qualified
Applications
- - Relay driver - High-speed line driver - Low-side loadswitch - Switching circuits
Datasheet
Alternative Parts
Common 2N7002BKS,115 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need 2N7002BKS,115 from Nexperia for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
For 2N7002BKS,115, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
Looking to source 2N7002BKS,115? Submit an RFQ and let our Shenzhen sourcing team check available supplier options for you.