HANGYU MICROELECTRONICS

1N5822

Diodes

Manufacturer
HANGYU MICROELECTRONICSAsian Brands
MPN
1N5822
Product Type
Semiconductors & Discrete
Package / Case
DO-201AD
Datasheet
1N5822 Datasheet
Key Attributes
Voltage - DC Reverse (Vr) (Max): 40V
Diode Configuration: 1 Independent
Current - Rectified: 3A
Voltage - Forward(Vf@If): 525mV@3A

Technical Specifications

TypeDescription
Diode Configuration1 Independent
Forward Current3 A
Voltage - DC Reverse (Vr) (Max)40V
Operating Junction Temp-65°C~+125°C
TypeDescription
Forward Voltage525mV@3A
Reverse Leakage Current (Ir)500uA@40V
Surge Current80A
Package / CaseDO-201AD

Features

  • Plastic package meets Underwriters Laboratories 94V-0 flammability rating
  • Metal-silicon junction, majority carrier conduction
  • Guard ring for overvoltage protection
  • Low power consumption, high efficiency
  • High current capability, low forward voltage drop
  • High surge capability
  • Suitable for low voltage, high frequency inverter, freewheeling, and polarity protection applications
  • High temperature soldering guaranteed: 250°C/10 sec, 0.375 inch (9.5mm) lead length, 5 lbs (2.3kg) pull strength

Datasheet

📄 Open Download

Alternative Parts

Common 1N5822 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
CNHTS8541100000
USHTS8541100040
TARIC8541100000
CAHTS8541100090
TypeDetails
BRHTS85411011
INHTS85411000
MXHTS8541.10.01

Sourcing Information

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